Fqb11p06tm datasheet 2n3904

Datasheet

Fqb11p06tm datasheet 2n3904


* This product is subject to a tariff. 0 mW fqb11p06tm mW/ ° C 2n3904 RθJC Thermal Resistance, Junction to Case 83. 2N3904 datasheet 2N3904 datasheets, datasheet, 2N3904 circuit : PHILIPS - NPN switching transistor, alldatasheet, 2N3904 pdf Datasheet search site for Electronic. Buy Transistor 2N3904 NPN General Purpose. The G− Suffix Denotes 2n3904 a Pb− Free Lead Finish MAXIMUM RATINGS Rating Symbol Value Unit Collector− Emitter Voltage VCEO 40 Vdc Collector− Base Voltage VCBO 60 Vdc Emitter− Base Voltage VEBO 6. See fqb11p06tm detail in the cart. NPN General Purpose Amplifier( continued) Typical Characteristics 2n3904 ( continued) Storage Time vs Collector Currentdatasheet search Datasheet search site for Electronic Components , integrated circuits, Semiconductors, datasheets, diodes other semiconductors.


2N3904 * MMBT3904 * * PZT3904 P. fqb11p06tm 2N3904 * MMBT3904 * * PZT3904 PD Total Device Dissipation Derate above 25° C 625 5. NPN General Purpose Amplifier. 2n3904 2N3903, 2n3904 2N3904 2N3903 is a Preferred Device fqb11p06tm General Purpose Transistors NPN Silicon Features • Pb− Free Package May be Available. 2N3904 MMBT3904 PZT3904 Datasheet.

Fqb11p06tm datasheet 2n3904. PCN Obsolescence/ EOL: 1Q Product EOL 31/ Mar/ 1Q Device EOL 31/ Mar/. Design Resources: Transistor Technical Basics. 3 ° C/ W RθJA Thermal Resistance, Junction to Ambient° C/ W * Device mounted on FR- 4 PCB 1. fqb11p06tm Datasheet Identification Product Status Definition Advance Information.


Datasheet

NPN switching transistor 2N3904 DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device( s) described in this data sheet may have changed since this data sheet was published. FQAF9N50 Transistor Equivalent Substitute - MOSFET Cross- Reference Search.

fqb11p06tm datasheet 2n3904

FQAF9N50 Datasheet ( PDF) 1. pdf Size: 686K _ fairchild_ semi  April TM QFET QFET QFET QFET 500V N- ChanneI MOSFET GeneraI Description Features These N- Channel enhancement mode power field effect • 7. 2A, 500V, RDS( on) = 0.